Wetting behavior of MoS₂ thin films

Abstract

The water contact angle () measurements have been carried on MoS2 thin films grown by chemical vapor deposition. An increase in by almost 70% compared to the bare quartz substrate indicates that MoS2 can efficiently screen the van der Waals interaction of the underlying substrate with water. The increases with the number of MoS2 layers. The observed advancing and receding of 98.0° and 55.40°, respectively indicates a significant contact angle hysteresis. Neumann's equation of state theory is used to determine the surface free energy of MoS2 layer and is estimated to be about 39 mJ m−2.