2019 Electron Devices Technology and Manufacturing Conference (EDTM) · 2019 · 15 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsStrain EngineeringWide Band Gap SemiconductorsWide-bandgap SemiconductorsGallium NitrideHigh-electron-mobility TransistorsNitride PassivationPassivationStrain EffectsStrain Effects On Electronic PropertiesStress DistributionTwo-dimensional Electron Gases
The concentration of the two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction is dominated by the stress developed in AlGaN layer. In this work, the output performance of AlGaN/GaN high electron mobility transistors (HEMTs) was improved by depositing a stressed SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> as a passivation layer, and the external strain applied onto AlGaN was measured using Raman spectroscopy. As a result, an improvement in on-state resistance and drive current of the device was attained due to the extra 2DEG concentration induced by the external strain. Also, to determine the strain-induced threshold-voltage shift, the stress distribution over the gate region was analyzed.
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