A 60–90-GHz CMOS Double-Neutralized LNA Technology With 6.3-dB NF and −10dBm P_−1dB

Abstract

This letter presents a CMOS millimeter-wave low-noise amplifier (LNA) with flat gain and noise figure (NF) over the entire bandwidth of 60-90 GHz. The proposed double-neutralized technique in the third stage improves both maximum available gain and stability compared to the traditional neutralized common source technique. By partially distributing the center frequencies over three stages, the LNA achieves the wideband performance, with a power gain of 12.7 ± 1.5 dB over 60-90 GHz, NF of 6.3-8.4 dB for frequencies over the range of 75-90 GHz, and an input 1-dB compression point (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1 dB</sub> ) of -10 dBm at 77 GHz. Implemented in 65-nm CMOS, the LNA consumes 33.5 mW under 1.8 V with a silicon area of 0.45 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> with pads included.