Synthesis of Highly Coherent SiGe and Si₄Ge Nanostructures by Molecular Beam Epitaxy of H₃SiGeH₃ and Ge(SiH₃)₄

Abstract

Stoichiometric SiGe and Si4Ge epitaxial films and coherent islands are created on Si(100) via thermal dehydrogenation of H3SiGeH3 and Ge(SiH3)4, respectively. The control of morphology and composition x of Si1-xGex nanostructures at the atomic level is achieved for the first time via CVD growth of single-source precursors containing precise atomic arrangements with direct Si−Ge bonds.