InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength

Abstract

High-speed back-illuminated InGaAsP/InP uni-traveling-carrier photodiodes (PDs) at 1064 nm were demonstrated with 3-dB bandwidth of 17.8 GHz at −5-V bias. PDs with 40- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -diameter deliver RF output power as high as 19.5 dBm at 13 GHz. This structure can achieve low dark current density of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1\times 10^{-8}$ </tex-math></inline-formula> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at −5-V bias and quantum efficiency of 45.2% at 1064 nm. An analytical model based on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$S$ </tex-math></inline-formula> -parameter fitting was built to extract parameter to assess the bandwidth limiting factors.