Complex Permittivity and Permeability of Vanadium Dioxide at Microwave Frequencies

Abstract

Vanadium dioxide (VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) has been identified as a material capable of transitioning from an insulator to a metal close to room temperature. Previous works have demonstrated potential applications of this material in various microwave components or devices. However, the complex permittivity and permeability characterization of the VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> over X-band has not been previously reported. Knowledge of these properties is essential for accurate modeling of the components and devices utilizing VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . This paper characterizes a VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film deposited on a quartz substrate in a WR90 waveguide using a vector network analyzer. The S-parameters, conductivity, relative complex permittivity, and permeability of the VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film are determined across the transition temperature.