An Expanded Cox and Strack Method for Precise Extraction of Specific Contact Resistance of Transition Metal Oxide/<i>n-</i>Silicon Heterojunction

Abstract

Specific contact resistance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$(\rho _{c})$</tex-math></inline-formula> , commonly extracted by Cox and Strack method (CSM) and transfer length method (TLM), is one of the most important properties of carrier-selective contacts. However, in most cases, the hole-selective contacts (HSCs) deposited on n-type silicon (n-Si) substrate are Schottky heterojunction other than Ohmic contact, impeding the accurate extraction of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\rho _{c}$</tex-math></inline-formula> by CSM and TLM. In this paper, an expanded CSM is proposed to precisely extract the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\rho _{c}$</tex-math></inline-formula> of MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /n-Si heterojunction, achieving a generally lower coefficient of variation. The current transport characteristic and the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\rho _{c}$</tex-math></inline-formula> value of MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /n-Si heterocontact are further verified by technology computer aided design (TCAD) simulation. The results demonstrate that the expanded CSM enables a more precise <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\rho _{c}$</tex-math></inline-formula> extraction, a better preparation technology compatibility, and a wider range of application, compared to TLM.