Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2

Abstract

Schottky effect of two-dimensional materials is important for nanoscale electrics. A ReSe₂ flake is transferred to be suspended between an Au sink and an Au nanofilm. This device is initially designed to measure the transport properties of the ReSe₂ flake. However, a rectification behavior is observed in the experiment from 273 to 340 K. The rectification coefficient is about 10. The microstructure and elements composition are systematically analyzed. The ReSe₂ flake and the Au film are found to be in contact with the Si substrate from the scanning electron microscope image in slant view of 45°. The ReSe₂/Si and Si/Au contacts are p-n heterojunction and Schottky contacts. Asymmetry of both contacts results in the rectification behavior. The prediction based on the thermionic emission theory agrees well with experimental data.