Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C⁺ and He⁺ ions

Abstract

Abstract This study examines C + and He + ion irradiation‐induced amorphization processes in 3C–SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared with their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation‐induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface‐driven amorphization proceeds at comparable rates for C + and He + ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.