SnS₂/SnS p–n heterojunctions with an accumulation layer for ultrasensitive room-temperature NO₂ detection

Abstract

The unique features of SnS₂ make it a sensitive material ideal for preparing high-performance nitrogen dioxide (NO₂) gas sensors. However, sensors based on pristine tin disulfide (SnS₂) fail to work at room temperature (RT) owing to their poor intrinsic conductivity and weak adsorptivity toward the target gas, thereby impeding their wide application. Herein, an ultrasensitive and fully recoverable room-temperature NO₂ gas sensor based on SnS₂/SnS p-n heterojunctions with an accumulation layer was fabricated. The amounts of SnS₂/SnS heterojunctions can be effectively controlled by tuning the ratios of tin and sulfur precursors in the easy one-step solvothermal synthesis. Compared with pristine SnS₂, the conductivity of SnS₂/SnS heterostructures improved considerably. Such improvement was caused by the electron transfer from p-type SnS to n-type SnS₂ because the Fermi level of SnS was higher than that of SnS₂. The sensing response of optimized SnS₂/SnS toward 4 ppm NO₂ was 660% at room temperature, which was higher than most reported sensitivity values of other two-dimensional (2D) materials at room temperature. The superior sensing response of SnS₂/SnS heterostructures was attributed to the enhanced electron transport and the increased adsorption sites caused by the SnS₂/SnS p-n heterojunctions. Moreover, the SnS₂/SnS sensor showed good selectivity and long-term stability. These achievements of SnS₂/SnS heterostructured sensors make them highly desirable for practical applications.