Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Abstract

To realize basic electronic units such as complementary metal-oxide-semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p- and n-type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron-charge transfer doping by depositing a thin Al₂ O₃ layer on chemical vapor deposition (CVD)-grown 2H-MoTe₂ is utilized to tune the doping from p- to n-type. Moreover, a type-controllable MoTe₂ transistor with a low Schottky barrier height is prepared. The selectively converted n-type MoTe₂ transistor from the p-channel exhibits a maximum on-state current of 10 µA, with a higher electron mobility of 8.9 cm² V^-1 s^-1 at a drain voltage (V_ds ) of 1 V with a low Schottky barrier height of 28.4 meV. To validate the aforementioned approach, a prototype homogeneous CMOS inverter is fabricated on a CVD-grown 2H-MoTe₂ single crystal. The proposed inverter exhibits a high DC voltage gain of 9.2 with good dynamic behavior up to a modulation frequency of 1 kHz. The proposed approach may have potential for realizing future 2D transition metal dichalcogenide-based efficient and ultrafast electronic units with high-density circuit components under a low-dimensional regime.