Reliability of Magnetoelastic Switching of Nonideal Nanomagnets with Defects: A Case Study for the Viability of Straintronic Logic and Memory

Abstract

The emerging field of $s\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}s$ may be able to sustain Moore's Law by replacing transistors with switches in which electrically generated strain flips the state of a nanomagnet---an extremely energy-efficient platform for Boolean logic and memory. Can it really work, though? Considering realistic nanomagnets with localized or extended structural defects, the authors find that those flaws increase the switching-error probability by orders of magnitude, making logic applications inconceivable. Even memory applications, more forgiving of errors, are dubious. This calls into question the viability of straintronics for Boolean computing.