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Highly Luminous N<sup>3–</sup>-Substituted Li<sub>2</sub>MSiO<sub>4−δ</sub>N<sub>2/3δ</sub>:Eu<sup>2+</sup> (M = Ca, Sr, and Ba) for White NUV Light-Emitting Diodes

11

Citations

32

References

2019

Year

Abstract

The N<sup>3-</sup>-substituted Li<sub>2</sub>MSiO<sub>4</sub>:Eu<sup>2+</sup> (M = Ca, Sr, and Ba) phosphors were systematically prepared and analyzed. Secondary-ion mass spectroscopy measurements revealed that the average N<sup>3-</sup> contents are 0.003 for Ca, 0.009 for Sr, and 0.032 for Ba. Furthermore, the N<sup>3-</sup> incorporation in the host lattices was corroborated by infrared and X-ray photoelectron spectroscopies. From the photoluminescence spectra of Li<sub>2</sub>MSiO<sub>4</sub>:Eu<sup>2+</sup> (M = Ca, Sr, and Ba) phosphors before and after N<sup>3-</sup> doping, it was verified that the enhanced emission intensity of the phosphors is most likely due to the N<sup>3-</sup> doping. In Li<sub>2</sub>MSiO<sub>4</sub>:Eu<sup>2+</sup> (M = Ca, Sr, and Ba) phosphors, the maximum wavelengths of the emission band were red-shifted in the order Ca < Ba < Sr, which is not consistent with the trend of crystal field splitting: Ba < Sr < Ca. This discrepancy was clearly explained by electron-electron repulsions among polyhedra, LiO<sub>4</sub>-MO <sub><i>n</i></sub> , SiO<sub>4</sub>-MO <sub><i>n</i></sub> , and MO <sub><i>n</i></sub> -M'O <sub><i>n</i></sub> associated with structural difference in the host lattices. Therefore, the energy levels associated with the 4f<sup>6</sup>5d energy levels of Eu<sup>2+</sup> are definitely established in the following order: Li<sub>2</sub>CaSiO<sub>4</sub>:Eu<sup>2+</sup> > Li<sub>2</sub>BaSiO<sub>4</sub>:Eu<sup>2+</sup> > Li<sub>2</sub>SrSiO<sub>4</sub>:Eu<sup>2+</sup>. Furthermore, using the Williamson-Hall (W-H) method, the determined structural strains of Li<sub>2</sub>MSiO<sub>4</sub>:Eu<sup>2+</sup> (M = Ca, Sr, and Ba) phosphors revealed that the increased compressive strain after N<sup>3-</sup> doping induces the enhanced emission intensity of these phosphors. White light-emitting diodes made by three N<sup>3-</sup>-doped phosphors and a 365 nm emitting InGaN chip showed the (0.333, 0.373) color coordinate and high color-rendering index (<i>R</i> <sub>a</sub> = 83). These phosphor materials may provide a platform for development of new efficient phosphors in solid-state lighting field.

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