Improved photovoltaic performance of monocrystalline silicon solar cell through luminescent down‐converting Gd₂O₂S:Tb³⁺ phosphor

Abstract

Abstract This work reports on efforts to enhance the photovoltaic performance of standard p‐type monocrystalline silicon solar cell (mono‐Si) through the application of ultraviolet spectral down‐converting phosphors. Terbium‐doped gadolinium oxysulfide phosphor and undoped‐gadolinium oxysulfide precursor powders were prepared by a controlled hydrothermal decomposition of a urea homogeneous precipitation method. The resulting rare‐earth element hydroxycarbonate precursor powders were then converted to the oxysulfide by annealing at 900°C in a sulfur atmosphere. The as‐prepared phosphors were encapsulated in ethylene vinyl acetate co‐polymer resin and applied on the textured surface of solar cell using rotary screen printing. Comparative results from X‐ray powder diffraction, field emission scanning electron microscopy, scanning transmission electron microscopy, and photoluminescence spectroscopy studies on the microstructure and luminescent properties of the materials are reported. We also compared the optical reflectance and external quantum efficiency response of the cells with and without a luminescent phosphor layer. The results obtained on the terbium‐doped gadolinium oxysulfide phosphor show clearly that the down‐conversion effect induced by the terbium dopant play a crucial role in enhancing the photovoltaic cells' performance. Under an empirical one‐sun illumination, the modified cells showed an optimum enhancement of 3.6% (from 16.43% to 17.02%) in conversion efficiency relative to bare cells. In the concentration range of 1 to 2.5 mg/mL, EVA/Gd 2 O 2 S (blank) composites also improve electrical efficiency, but not as much as EVA/Gd 2 O 2 S:Tb 3+ composites.