Publication | Closed Access
Optical and Optoelectronic Properties of Black Phosphorus and Recent Photonic and Optoelectronic Applications
89
Citations
170
References
2019
Year
Optical MaterialsOptical TechnologiesEngineeringPuckered StructureOptoelectronic DevicesChemistrySemiconductor NanostructuresSemiconductorsIi-vi SemiconductorOptical PropertiesPhosphoreneCompound SemiconductorMaterials SciencePhotonicsRecent PhotonicPhysicsOptoelectronic PropertiesOptoelectronic MaterialsSemiconductor MaterialNovel SemiconductorsBlack PhosphorusPhotonic DeviceNatural SciencesApplied PhysicsOptoelectronics
The semiconductor industry’s rapid growth demands new materials, and black phosphorus—a 2D semiconductor with high carrier mobility, a tunable direct bandgap, and anisotropic puckered structure—offers promising photonic and optoelectronic applications. This review surveys the history of black phosphorus and highlights recent progress in its optical properties and photonic/optoelectronic applications, while outlining challenges and opportunities for large‑scale production. The authors conduct a literature review of recent advances in black phosphorus’s optical properties and photonic/optoelectronic applications.
Abstract The rapid development of the semiconductor industry calls for the exploration of novel semiconductors to cater to modern technical and commercial needs. Recently, black phosphorus (BP) has emerged as a new class of 2D semiconducting material and has attracted intensive research attention. The high carrier mobility and tunable direct bandgap of BP deliver great promise in photonic and optoelectronic device applications. Furthermore, the unique intrinsic anisotropy arising from the puckered structure can be exploited in the design of new devices. This review briefly introduces the history of BP and puts emphasis on recent advances pertaining to its optical properties and applications in the photonic and optoelectronic fields. From the perspective of mass production and practical use of BP, some of the research challenges and opportunities are discussed.
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