Spin-Orbit-Torque Switching Mediated by an Antiferromagnetic Insulator

Abstract

Spin-orbit torque is widely studied as a switching mechanism for magnetic memory and spin logic devices. In typical device configurations, a lot of current flows through the shunting path of the ferromagnetic metal, significantly increasing energy consumption. This work demonstrates that spin-torque transfer can be realized across an antiferromagnetic insulator: By applying current in the heavy-metal layer, one can achieve magnetic switching in the magnetic free layer, despite the antiferromagnetic-insulator layer in between. Thus electrically isolated reading and writing paths in spin-orbit-torque devices, for energy-thrifty favorable magnetic control, are possible.