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Enhanced thermoelectric transport properties of n-type InSe due to the emergence of the flat band by Si doping
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Citations
31
References
2019
Year
N-type Inse DueEngineeringThermoelectricsThermal ConductivitySemiconductorsQuantum MaterialsImproved Thermoelectric FigureThermodynamicsCharge Carrier TransportMaterials ScienceElectrical EngineeringPhysicsThermal TransportSemiconductor MaterialElectrical PropertyFlat BandApplied PhysicsCondensed Matter PhysicsThermoelectric MaterialElectrical Insulation
An improved thermoelectric figure of merit (<italic>zT</italic>) of 0.14 at 795 K was obtained in 7% Si doped InSe due to the emergence of the flat band.
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