Angewandte Chemie International Edition · 2019 · 180 citations · 35 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptical MaterialsOpticsLaser PhysicsNonlinear Optical MaterialsNonlinear OpticsOptical Properties Of SolidsRadiation Damage In MaterialsSemiconductor LasersChalcogenide Host MaterialsDiffraction AnalysisHarmonic GenerationHigh-power LasersLasersOrthorhombic SymmetryOrthorhombic SystemSecond-harmonic Generation
Abstract A big challenge for nonlinear optical (NLO) materials is the application in high power lasers, which needs the simultaneous occurrence of large second harmonic generation (SHG) and high laser induced damage threshold (LIDT). Herein we report the preparation of a new Ga 2 Se 3 phase, which shows the SHG intensities of around 2.3 times and the LIDT of around 16.7 times those of AgGaS 2 (AGS), respectively. In addition, its IR transparent window ca. 0.59–25 μm is also significantly wider than that of AGS (ca. 0.48–≈11.4 μm). The occurrence of the strong SHG responses and good phase‐matching indicate that the structure of the new Ga 2 Se 3 phase can only be non‐centrosymmetric and have a lower symmetry than the cubic γ‐phase. The observed excellent SHG and phase‐matching properties are consistent with our diffraction experiments and can be well explained by using the orthorhombic models obtained through our high throughput simulations.
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