Publication | Closed Access

Electronic properties of silicon carbide nanotube with Stone Wales defects under uniaxial pressure: A computational study

Materials ScienceOne-dimensional MaterialEngineeringPhysicsNanoelectronicsCondensed Matter PhysicsApplied PhysicsStone Wales DefectsNanoscale ModelingDefect FormationSilicon Carbide NanotubeElectronic PropertiesCarbide