Low‐Power, Flexible Nonvolatile Organic Transistor Memory Based on an Ultrathin Bilayer Dielectric Stack

Abstract

Abstract Organic thin film transistor nonvolatile memories (OTFT‐NVMs) with polymeric electret layers have attracted research attention for the application to emerging wearable electronics. However, it is challenging to develop low‐power flexible OTFT‐NVMs due to the lack of candidate polymers for flexible electret and blocking dielectric layer (BDL) equipped with the thickness downscalability and sufficiently strong insulating properties. Here, this study reports a low‐power, flexible OTFT‐NVM fabricated with a bilayer dielectric stack composed of a 3 nm thick polymer electret layer and a high‐performance BDL prepared via an initiated chemical vapor deposition process. Especially, a crosslinked poly(1,4‐butanediol diacrylate) film is newly synthesized as a BDL, which shows excellent insulating properties with high breakdown field ( E break > 8 MV cm −1 with its thickness of 21.3 nm). Coupled with a 3 nm thick polymer electret layer (poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane)), the fabricated NVMs exhibit a tunable memory window with dramatically reduced programming/erasing voltages less than 15 V and an extrapolated retention time as long as 10 8 s. Moreover, the device maintains their memory performance up to 1.6% of applied tensile strain. The OTFT‐NVMs with the ultrathin dielectric stack can serve as a promising dielectric for stable data storage in various future wearable electronics.