Publication | Closed Access
The Resistive Switching Characteristics of TiN/HfO2/Ag RRAM Devices with Bidirectional Current Compliance
27
Citations
22
References
2019
Year
Materials ScienceElectrical EngineeringEngineeringBidirectional Current ComplianceApplied PhysicsTin/hfo2/ag Rram DevicesMemory DeviceSemiconductor MemoryResistive Switching CharacteristicsMicroelectronicsPhase Change Memory
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