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Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers

Wide-bandgap SemiconductorElectrical EngineeringPerformance ImprovementsIrregular Sawtooth HoleEngineeringApplied PhysicsAluminum Gallium NitrideNew Lighting TechnologyCategoryiii-v SemiconductorOptoelectronicsElectron Blocking Layers