Attosecond temporal confinement of interband excitation by intraband motion

Abstract

High order harmonic generation (HHG) in semiconductors opens a new frontier in strong field physics and attosecond science. However, the underlying physical mechanisms are not yet fully understood and lively debated. Here, we identify and discuss carrier-wave population transfer as a novel and important dynamical effect. We find that the interband excitation occurs in an extremely short time window due to the intraband motion. Our analysis based on this finding allows for a physically intuitive interpretation of the anomalous carrier-envelope phase dependence observed in HHG from MgO and to understand the dominant role of the interband polarization as reported in a series of recent semiconductor HHG experiments. Motivated by the discovered coupling mechanism, we demonstrate that the interband excitation can be controlled by an appropriately tailored two-color field. An ultrabroad supercontinuum spectrum covering the entire plateau region can be generated which directly creates an isolated-attosecond pulse even without phase compensation. Our results provide remarkable insight into the basic physics governing the sub-cycle electron motion with significant implications for the generation of isolated-attosecond light pulses in semiconductor materials.