A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs

Abstract

Semiconductor devices based solid-state circuit breakers (SSCBs) are promising in the dc power distribution system as protective equipment for their ultrashort action time. This letter proposes a topology of SSCB using series connected silicon carbide (SiC) metal oxide semiconductor field effect transistors (mosfets), which only requires a single isolated gate driver. The SSCB has very low cost and high reliability because it only has 13 components including passive components and diodes apart from two SiC mosfets to achieve both balanced voltage distribution during short-circuit interruption duration and reliable positive gate voltage during on-state. The SSCB prototype is built and experimentally verified to interrupt 75 A short-circuit current under the dc-bus voltage of 1200 V within 1.5 μs.