Chemical Vapor Deposition Growth of High Crystallinity Sb₂Se₃ Nanowire with Strong Anisotropy for Near‐Infrared Photodetectors

Abstract

Abstract Low‐dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb 2 Se 3 nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb 2 Se 3 NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle‐resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb 2 Se 3 NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb 2 Se 3 NW exhibit a wide spectral photoresponse range from visible to NIR (400–900 nm). Owing to the high crystallinity of Sb 2 Se 3 NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W −1 , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb 2 Se 3 NW, the device exhibits polarization‐dependent photoresponse. The high crystallinity and superior anisotropy of Sb 2 Se 3 NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.