High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications

Abstract

We demonstrate RF-compatible quantum well InGaAs MOSFETs integrated on Si substrates, with LG down to 14 nm and a Si CMOS compatible RMG fabrication flow. Devices exhibit simultaneously extrapolated ft and fmax of 370 and 310 GHz, respectively, the highest reported combined ft/fmax for III-V MOSFETs on Si. This is enabled by the scaled LG, gm of 1.75 mS/μn, 8 nm source and drain spacers and raised source and drain extensions maintaining low access resistance. The use of the InP/In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.75</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.25</sub> As/InP quantum well offers three times higher electron mobility and a 60% increase of gm, compared to reference devices.