Hydrophobic Cu₂O Quantum Dots Enabled by Surfactant Modification as Top Hole‐Transport Materials for Efficient Perovskite Solar Cells

Abstract

The utilization of an inorganic hole-transport layer (HTL) is one of the most effective methods to improve the stability and reduce the cost of perovskite solar cells (PSCs). However, achieving high-quality inorganic HTL films, especially HTL films in n-i-p structures, via solution processes remains a big challenge. Here, a simple surface modification strategy for low-cost and stable cuprous oxide (Cu₂O) quantum dots is proposed, which utilizes a silane coupling agent. The modified Cu₂O can be directly deposited on the perovskite film as the top HTL without decomposing the perovskite to maintain an n-i-p structure. The efficiency (18.9%) of PSCs with surface-modified Cu₂O as the HTL is significantly higher than that (11.9%) of PSCs with unmodified Cu₂O, which is also the record efficiency for a Cu₂O-based perovskite solar cell in n-i-p structure. The enhanced performance of PSCs is attributed to the remarkably enhanced film properties achieved through surface modification. Moreover, because of the dopant-free technology and hydrophobic surface, the Cu₂O-based PSCs have distinctly better stability than 2,2',7,7'-tetrakis[<i>N</i>,<i>N</i>-di(4-methoxyphenyl)amino]-9,9'-spiro-bifluorene-based PSCs.