Publication | Closed Access
Strong Non‐Epitaxial Interactions: Crystallographically Aligned PbSe on VSe<sub>2</sub>
13
Citations
14
References
2019
Year
EngineeringChemistrySemiconductor NanostructuresIi-vi SemiconductorPbse PrecursorsQuantum MaterialsSiliceneVse 2Materials ScienceSio 2Aligned PbseLayered MaterialCrystallographyTransition Metal ChalcogenidesSurface ScienceApplied PhysicsCondensed Matter PhysicsThin FilmsChemical Vapor Deposition
The interaction between a rock salt compound, PbSe, and the surface of a dichalcogenide (VSe 2 ) is probed by making PbSe, VSe 2 , [(PbSe) 1.11 ] 1 (VSe 2 ) 1 and PbSe on VSe 2 films. PbSe precursors deposited on SiO 2 form rough films with randomly oriented PbSe crystallites. VSe 2 precursors deposited on a SiO 2 surface form crystallographically aligned films. The precursor to the metastable misfit layer compound [(PbSe) 1.11 ] 1 (VSe 2 ) 1 deposited on SiO 2 forms a crystallographically aligned film. PbSe precursors deposited on VSe 2 are very crystallographically aligned relative to PbSe deposited on SiO 2 . This reflects the strong interaction between PbSe and VSe 2 at the interface. The results suggest that comparing the degree of crystallographic alignment of films of precursors of prospective constituents on SiO 2 relative to depositing them on each other may be a simple test to show if a misfit layer compound will form between the two constituents.
| Year | Citations | |
|---|---|---|
Page 1
Page 1