Write-Error Reduction of Voltage-Torque-Driven Magnetization Switching by a Controlled Voltage Pulse

Abstract

Voltage-driven magnetization switching is a promising solution for realizing ultralow-power magnetic memories with energy efficiency well beyond that of devices driven by electric current. For such applications, though, a substantial reduction of the write-error rate is strongly needed. The authors show that the precision of voltage-driven magnetization switching can be improved by precise control of a voltage pulse's shape. Using a proper fall time in the write pulse effectively cancels magnetization drift, due to intrinsic damping, and helps to reduce write error. This insight points the way for developing reliable voltage-driven spintronic devices.