Materials · 2019 · 14 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsEpitaxial GrowthIii-v SemiconductorsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersEpitaxial Film GrowthEpitaxial StrainLaser Gain MaterialsMolecular Beam EpitaxyPhotonic Crystal LasersQuantum Well StructuresSemiconductor Laser FabricationType-i Quantum Wells
This paper discusses the issue of controlling the epitaxial growth of mixed group V alloys to form a type-I InGaAsSb/AlGaAsSb double quantum wells (QWs) structure. We also discuss the run-to-run reproducibility of lattice-matched AlGaAsSb alloys and strained In0.35Ga0.65As0.095Sb0.905 in terms of growth parameters (V/III ratio, Sb2/As2 ratio). Molecular beam epitaxy (MBE) was used to grow two type-I InGaAsSb double-QWs laser structures differing only in the composition of the bottom cladding layer: Al0.85Ga0.15As0.072Sb0.928 (sample A) and Al0.5Ga0.5As0.043Sb0.957 (sample B). Both samples were respectively used in the fabrication of photonic crystal surface-emitting lasers (PCSELs). Sample A presented surface lasing action from circular as well as triangular photonic crystals. Sample B did not present surface lasing due to the deterioration of the active region during the growth of the upper cladding. Our findings underline the importance of temperature in the epitaxial formation of AlxGa1−xAsySb1−y in terms of lasing performance.
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GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet Wavelengths
Hideki Matsubara, Susumu Yoshimoto, H. Saito et al. · Science · 2007 · 365 citations
Ifor D. W. Samuel, Ebinazar B. Namdas, Graham A. Turnbull · Nature Photonics · 2009 · 275 citations