Understanding Spatiotemporal Photocarrier Dynamics in Monolayer and Bulk MoTe₂ for Optimized Optoelectronic Devices

Abstract

Semiconducting molybdenum ditelluride has emerged as a promising transition-metal dichalcogenide with a number of novel properties. In particular, its bandgap in infrared range makes it an attractive candidate for ultrathin and high-performance infrared optoelectronic applications. Dynamical properties of photocarriers play a key role in determining performance of such devices. We report an experimental study on spatiotemporal dynamics of photocarriers in both monolayer and bulk MoTe2. Transient absorption measurement in reflection geometry revealed ultrafast thermalization and relaxation processes of photocarriers and lifetimes of about 60 and 80 ps in monolayer and bulk MoTe2, respectively. By spatially resolved transient absorption measurements on monolayer, we obtained an exciton diffusion coefficient of 20 ± 10 cm2 s–1, a mean free time of 200 fs, a mean free path of 20 nm, and a diffusion length of 350 nm. The corresponding values for the bulk sample are 40 ± 10 cm2 s–1, 400 fs, 40 nm, and 570 nm, respectively. These results provide fundamental information for understanding and optimizing performance of MoTe2-based optoelectronic devices.