High speed near-infrared range sensor based on InP/InGaAs heterostructures

K J Smirnov, G.V. Tushavin

Journal of Physics Conference Series · 2018 · 31 citations · 2 references

DOIFull text

Open access

Concepts

Abstract

Technology of creation effective photocathode based on the InP/InGaAs heterostructures is given. The results of an experimental study of pin-diode, which was used as the receiver of photoelectrons, are presented. Arrangement of the vacuum photoelectronic device with InP/InGaAs photocathode is proposed.

References

2