A High-Speed Gate Driver with PCB-Embedded Rogowski Switch-Current Sensor for a 10 kV, 240 A, SiC MOSFET Module

Abstract

High-voltage SiC MOSFET modules are revolutionizing modern high power electronics owing to their high blocking voltage, low conduction resistance, and fast switching frequency. A 10 kV, 240 A SiC MOSFET module has recently become a candidate to build medium-voltage converters. The MOSFET module comprises three independent submodules that can be configured as three phase-legs, or one half-bridge by paralleling. To maximize its performance, this paper presents a smart gate driver design for this particular semiconductor device. The design concentrates on a high-current booster stage and a high-bandwidth PCB-embedded Rogowski switch-current sensors for the paralleled submodules. The PCB layout has satisfied high-voltage clearance and creepage standards. Finally, the booster current sharing and RSCS performance have been experimentally validated.