Publication | Closed Access
GaN HEMT for Space Applications
44
Citations
2
References
2018
Year
Unknown Venue
Wide-bandgap SemiconductorElectrical EngineeringEngineeringGan HemtRadiation HardnessElectronic EngineeringApplied PhysicsGan Hemt DevicesGan Power DeviceCategoryiii-v Semiconductor
This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions. We also developed high power/gain GaN IM HEMT for X-band applications such as deep space probe satellites or earth observation satellites. These GaN HEMT devices were submitted to space qualification tests that comply with the MIL standard and were confirmed to have sufficient reliability for space applications. We also conducted radiation hardness tests. Radiation resistance is of concern in space applications. Our GaN HEMT was confirmed to have enough robustness for radiation hardness.
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