Publication | Open Access
Carrier density control in Cu<sub>2</sub>HgGeTe<sub>4</sub>and discovery of Hg<sub>2</sub>GeTe<sub>4</sub><i>via</i>phase boundary mapping
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Citations
68
References
2018
Year
Ii-vi SemiconductorSemiconductor TechnologyTransition Metal ChalcogenidesEngineeringPhysicsPhase EquilibriumApplied PhysicsQuantum MaterialsCondensed Matter PhysicsSolid-state ChemistryCarrier Density ControlSemiconductor MaterialPhase Boundary MappingCharge Carrier TransportSolid-state Physic
Phase boundary mapping in Cu<sub>2</sub>HgGeTe<sub>4</sub>allows discovery of Hg<sub>2</sub>GeTe<sub>4</sub>and further enables carrier density control over 4 orders of magnitude.
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