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Voltage-controlled epitaxial strain in La0.7Sr0.3MnO3∕Pb(Mg1∕3Nb2∕3)O3-PbTiO3(001) films
129
Citations
11
References
2005
Year
Materials ScienceMagnetismMaterials EngineeringVoltage-controlled Epitaxial StrainEngineeringCrystalline DefectsFerroelectric ApplicationApplied PhysicsResistance ModulationsElectric FieldPiezoelectric MaterialThin FilmsMolecular Beam EpitaxyEpitaxial GrowthFunctional MaterialsLattice Deformation
Epitaxially grown La0.7Sr0.3MnO3 thin films show resistance modulations induced by the inverse piezoeffect of the employed Pb(Mg1∕3Nb2∕3)O3-PbTiO3(001) (PMN-PT) substrates. The in-plane strain state of the films can continuously be tuned by application of a piezovoltage to PMN-PT. The lattice deformation of a PMN-PT(001) substrate was quantified by x-ray measurements under an electric field. Variation of in-plane lattice parameters by ∼0.06% reversibly changes the resistance of the manganite films by up to 9% at 300 K and shifts the magnetic Curie temperature. Films of different thicknesses from 50 to 290 nm, offering different as-grown strain states, have been studied.
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