Back Enhanced SOI MOSFET as UV Light Sensor

Abstract

This paper presents for the first time the influence of ultraviolet (UV) light on BE SOI MOSFET. This new device from University of São Paulo has a reconfigurable behavior (can work as nMOS or pMOS depending of the back-gate voltage) and a very simple fabrication process, without any intentional doping steps. Aiming to build a light sensor that can be integrated on commercial SOI technologies, this paper will explore the sensitivity of the BE SOI in both operation modes, i.e., p- and ntypes, using experimental and simulated data. The best UV light sensitivity was obtained for a UV-A range (around 400nm wavelength) thanks to the front interface current increment.