EMI Analysis of Full-SiC Integrated Power Module

Abstract

Due to the high dv/dt and di/dt slew rates, the electromagnetic interference (EMI) issue in the high power level power module is serious. In this paper, a novel EMI model of full-SiC power module is proposed based on the ANSYS Q3D software and the EMI mechanical is analyzed by discussing the EMI coupling paths both in common-mode (CM) interference and differential-mode (DM) interference. Then, a synchronous buck converter based on the full-SiC power module is simulated in the ANSYS Simplorer software. Finally, a synchronous buck experimental platform based on a 1200V, 288A full-SiC power module is tested. It is found that the intensity of EMI increases as the voltage and current of power module increase. The intensity of the CM EMI presents uniform distribution along with frequency and a resonant peak appears at specific frequency points of the DM EMI.