EV Traction Inverter Employing Double-Sided Direct-Cooling Technology with SiC Power Device

Abstract

This paper demonstrates a high-power density automotive inverter with a SiC device. To enhance the inverter's performance, circuit implementation and double-sided direct-cooling technologies were developed. Use of an isometric circuit pattern, which connects the SiC MOSFET chips in parallel, suppresses the current imbalance between the parallel chips. The developed inverter reduces power loss by 60% compared with conventional silicon IGBT inverters.