Single-Spin Relaxation in a Synthetic Spin-Orbit Field

Abstract

Spin relaxation times are critical parameters in quantum information processing. Recent experiments with single-spin qubits in silicon have achieved qubit control via electric dipole spin resonance, in the presence of gradient magnetic fields generated by on-chip micromagnets. These studies have reported drastically reduced spin-relaxation times compared to those in traditional devices. Studying the magnetic field dependence of the relaxation rate, the authors find that the synthetic spin-orbit field introduces additional relaxation mechanisms, which they quantify. This insight will help to optimize the compromise between fast qubit control and enhanced spin relaxation.