Si MOS technology for spin-based quantum computing

Abstract

We present recent advances made towards the realization of hole and electron spin quantum bits (qubits) localized within Si Quantum Dots (QDs). These devices, operated at cryogenic temperatures, can be defined by slightly modifying an SOI NanoWire FET fabrication flow, and are thus particularly relevant in the perspective of large-scale co-integration of qubits and their cryogenic control electronics.