Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE - Concepedia

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Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE

17

Citations

57

References

2018

Year

Ramesh Ch, Prashant Tyagi, Brajesh S. Yadav, Sunil Ojha, K. K. Maurya, M. Senthil Kumar, Sunil Singh Kushvaha

Materials Science and Engineering B

Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringNitridation TemperatureApplied PhysicsAluminum Gallium NitrideLaser MbeGan Power DeviceCategoryiii-v SemiconductorOptoelectronics

References

	Year	Citations

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