Publication | Closed Access
HfO<sub>2</sub>/HfS<sub>2</sub> hybrid heterostructure fabricated <i>via</i> controllable chemical conversion of two-dimensional HfS<sub>2</sub>
81
Citations
34
References
2018
Year
EngineeringPlasma OxidationNative OxideOptoelectronic DevicesChemistrySemiconductor NanostructuresSemiconductorsChemical EngineeringQuantum MaterialsOxide HeterostructuresMaterials ScienceOxide ElectronicsSemiconductor Device FabricationElectronic MaterialsSurface ScienceApplied PhysicsMultilayer HeterostructuresTopological HeterostructuresHigh-k Dielectric
We demonstrate that HfO<sub>2</sub>, a high-K dielectric, can be prepared on the top surface of 2D HfS<sub>2</sub> through plasma oxidation, which results in a heterostructure composed of a 2D van der Waals semiconductor and its insulating native oxide.
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