Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method - Concepedia

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Development of self-rectifying ZnO thin film resistive switching memory device using successive ionic layer adsorption and reaction method

37

Citations

19

References

2018

Year

Vrushali S. Dongle, Akshata A. Dongare, Navaj B. Mullani, Pravin S. Pawar, Prashant Patil, Jaeyeong Heo, Tae Joo Park, Tukaram D. Dongale

Journal of Materials Science Materials in Electronics

Materials ScienceElectrical EngineeringEngineeringNanoelectronicsNanotechnologySurface ScienceOxide ElectronicsMemory DeviceSemiconductor MemoryPhase Change MemoryReaction Method

References

	Year	Citations

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