Controlled Layer-by-Layer Oxidation of MoTe₂ via O₃ Exposure

Abstract

Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate TMDs into complementary metal oxide semiconductor (CMOS) logic circuits. Here, we report a layer-by-layer oxidation of atomically thin MoTe₂ flakes via ozone (O₃) exposure. The thickness of MoO _x oxide film could be tuning with atomic-level accuracy simply by varying O₃ exposure time. Additionally, MoO _x-covered MoTe₂ shows a hole-dominated transport behavior. Our findings point to a simple and effective strategy for growing homogeneous surface oxide film on MoTe₂, which is promising for several purposes in metal-oxide-semiconductor transistor, ranging from surface passivation to dielectric layers.