Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing

TLDR

Photonic memory, inspired by highly connected biological neuromorphic systems, promises to overcome the von Neumann bottleneck for nonconventional computing. The study demonstrates a photonic flash memory based on all‑inorganic CsPbBr₃ perovskite quantum dots. The device relies on a heterostructure between CsPbBr₃ quantum dots and a semiconductor layer, enabling optically programmable and electrically erasable memory behavior. The device emulates short‑term, long‑term, and spike‑rate‑dependent plasticity, implements photonic potentiation and electrical habituation, and shows synaptic weight changes across wavelengths from 365 to 660 nm, indicating a promising platform for perovskite‑based neuromorphic memories.

Abstract

Inspired by the biological neuromorphic system, which exhibits a high degree of connectivity to process huge amounts of information, photonic memory is expected to pave a way to overcome the von Neumann bottleneck for nonconventional computing. Here, a photonic flash memory based on all-inorganic CsPbBr3 perovskite quantum dots (QDs) is demonstrated. The heterostructure formed between the CsPbBr3 QDs and semiconductor layer serves as a basis for optically programmable and electrically erasable characteristics of the memory device. Furthermore, synapse functions including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity are emulated at the device level. The photonic potentiation and electrical habituation are implemented and the synaptic weight exhibits multiple wavelength response from 365, 450, 520 to 660 nm. These results may locate the stage for further thrilling novel advances in perovskite-based memories.