A 160 GHz Frequency Quadrupler based on Heterogeneous Integration of GaAs Schottky Diodes onto Silicon using SU-8 for Epitaxy Transfer

Abstract

An integrated frequency quadrupler operating at 160 GHz, producing 100 mW of output power, and achieving peak efficiency of 25.5% is described. The quadrupler design is based on prior art and consists of GaAs Schottky diodes with epitaxy transferred to a micromachined silicon carrier forming a heterogeneously-integrated chip. A newly-developed fabrication process that eliminates high temperature annealing and utilizes SU-8 for adhesive bonding was employed to realize the circuit. The new process improves device yield and reliability compared to previous implementations.