Theoretical paradigm for the quantum spin Hall effect at high temperatures

Abstract

The quantum spin Hall effect (QSHE) has formed the seed for contemporary research on topological quantum states of matter. Since its discovery in HgTe/CdTe quantum wells and InAs/GaSb heterostructures, all such systems have so far been suffering from extremely low operating temperatures, rendering any technological application out of reach. We formulate a theoretical paradigm to accomplish the high temperature QSHE in monolayer-substrate heterostructures. Specifically, we explicate our proposal for hexagonal compounds formed by monolayers of heavy group-V elements (As, Sb, Bi) on a SiC substrate. We show how orbital filtering due to substrate hybridization, a tailored multiorbital density of states at low energies, and large spin-orbit coupling can conspire to yield QSH states with bulk gaps of several hundreds of meV. Combined with the successful realization of Bi/SiC (0001), with a measured bulk gap of $\ensuremath{\sim}800$ meV reported previously [F. Reis et al., Science 357, 287 (2017)], our paradigm elevates the QSHE from an intricate quantum phenomenon at low temperatures to a scalable effect amenable to device design and engineering.