Pressure‐Induced Emission Enhancement, Band‐Gap Narrowing, and Metallization of Halide Perovskite Cs₃Bi₂I₉

Abstract

Low-toxicity, air-stable bismuth-based perovskite materials are attractive substitutes for lead halide perovskites in photovoltaic and optoelectronic devices. The structural, optical, and electrical property changes of zero-dimensional perovskite Cs₃ Bi₂ I₉ resulting from lattice compression is presented. An emission enhancement under mild pressure is attributed to the increase in exciton binding energy. Unprecedented band gap narrowing originated from Bi-I bond contraction, and the decrease in bridging Bi-I-Bi angle enhances metal halide orbital overlap, thereby breaking through the Shockley-Queisser limit under relatively low pressure. Pressure-induced structural evolutions correlate well with changes in optical properties, and the changes are reversible upon decompression. Considerable resistance reduction implies a semiconductor-to-conductor transition at ca. 28 GPa, and the final confirmed metallic character by electrical experiments indicates a wholly new electronic property.