Amorphous Thin Film for Thermoelectric Application

Abstract

Amorphous-InGaZnO is n-type semiconductor material and has enormous potential such as transparency, flexible application owing to a low temperature fabrication process. In this study, Effects of annealing on the thermoelectric properties of a-IGZO thin film are evaluated for a low temperature process. We also demonstrated flexible TEG using a-InGaZnO and PEN substrate.